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| Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors 2SB764 TO-92MOD 1. EMITTER 2. COLLECTOR TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.9 W (Tamb=25) Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE sat 3. BASE 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-1mA, IB=0 IE=-10A, IC=0 VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz -60 -50 -5 -1 -1 60 30 -0.7 -1.2 150 20 320 A A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range D 60-120 E 100-200 F 160-320 |
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